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Electronic Resource
Springer
Applied physics 23 (1980), S. 15-19
ISSN: 1432-0630
Keywords: 64.75+g ; 61.70T ; 42.55
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated. The dopants were introduced by vacuum deposition followed by ruby laser irradiation. Their solubility was determined by Rutherford backscattering spectroscopy measurements in channelling and random conditions. In all cases, a maximum solubilityC S * , much higher than the equilibrium solubility limitC S 0 and independent of the pulsed laser energy density, was found. The values obtained are in good agreement with those calculated from a simple model based on phase diagram considerations, using the relationship: $$C_S^* = \frac{{C_S^0 }}{{k_0 }}k^* ,$$ wherek 0 andk * are the equilibrium and effective distribution coefficients. Finally, the existence of a new solubility limit for a laser treatment is discussed.
Type of Medium: Electronic Resource
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