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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 25 (1981), S. 139-142 
    ISSN: 1432-0630
    Keywords: 61.80 ; 78.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High power density electron beams offer new opportunities for studies of epitaxial growth of semiconductor materials. Assuming that the mechanism of epitaxial growth can be understood as a surface melting followed by supercooling regrowth, the heat flow equation has been applied to calculate the temperature reached after an electron beam pulse of power density between 0.5–2 J/cm2. Comparison with laser annealing is made.
    Type of Medium: Electronic Resource
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