Springer Online Journal Archives 1860-2000
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Abstract Deep-level transient spectroscopy has been used to investigate the defects remaining in ion implantedp-n junctions in silicon after various pulsed annealing techniques, including ruby and YAG lasers as well as pulsed electron beams (PEBA). The nature and distribution of the various identified levels are discussed for each procedure as a function of various experimental parameters.
Type of Medium: