Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

  • 1
    Electronic Resource
    Electronic Resource
    Applied physics 43 (1987), S. 301-304 
    ISSN: 1432-0630
    Keywords: 68.55 ; 78.30 ; 3.40 Q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrathin gate oxides (90–300 Å) have been grown on silicon under dry oxygen using a lamp light heater. The oxidation kinetics is quite different from that expected in conventional furnace oxidation since the process is shown to be diffusion limited. Infrared absorption analysis shows neither shift nor broadening of the Si-O stretching mode, indicating that the rapid oxide is stoichiometric with a good structural order. The electrical characteristics of Al-gate capacitors assessed byC-V andG-V measurements with thickness as parameter shows a good quality for oxide films thinner than 100 Å. For thicknesses higher than this value, cleaning techniques and post-oxidation annealing must be used.
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...