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    ISSN: 1432-0630
    Keywords: 72.20 ; 85.30 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract p +/n + InGaAsP tunnel diodes with a bandgap of 0.95 eV were fabricated by liquid phase epitaxy and their electrical properties were characterized. Forward conductances of 500 Φ−1 cm−2, peak current densities of 28.5 A/cm2 and peak to valley current ratios of 14.3 were obtained at room temperature. These devices were incorporated successfully as Intercell Ohmic Connections (IOCs) for an InP-based, two-terminal monolithic multijunction tandem solar cell.
    Type of Medium: Electronic Resource
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