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    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2693-2695 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of charge collection measurements on liquid encapsulated Czochralski grown semi-insulating GaAs devices for alpha particles. Experimental evidence is given which demonstrates a drastic enhancement of charge collection efficiency after prolonged illumination with 1.086 μm below-gap light. The recovery of EL2 from metastable state to normal state can also be achieved by electric field at high bias voltage. The experimental result shows that the EL2 defect is practically the dominant trap for free charge carriers and together with other shallow defects responsible for the electric compensation in semi-insulating GaAs. The metastable transition of the EL2 defect is always simultaneously accompanied by the neutralization of a shallow acceptor. No change in the type of conductivity was found. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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