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    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1915-1917 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS1−xTex (0≤x≤1) single-crystal alloy films were grown on GaAs and Si substrates by molecular beam epitaxy. Strong photoluminescence in the yellow to blue light region, with room-temperature external quantum efficiencies of 2%–4% at an unoptimized excitation wavelength of 365 nm, was observed. The enhancement of luminescence was attributed to the presence of Te isoelectronic hole traps in the films. Strong bowing of the band-gap energy as a function of composition x was also observed, with the minimum near x=0.7. The line width as well as the Stokes shift of the luminescence peak from the band edge were found to increase as Te composition decreases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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